NORMALIZATION OF LARGE-SCALE BEHAVIOURAL DATA COLLECTED FROM ZEBRAFISH.


Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C

A novel 1500°C gate oxidation process has been demonstrated on Si face of 4H-SiC.Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 cm V-1 WALLET s-1 without post oxidation passivation.This is substantially higher than other repo

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